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2sk1151(l)(s), 2sk1152(l)(s) silicon n-channel mos fet ade-208-1245 (z) 1st. edition mar. 2001 application high speed power switching features low on-resistance high speed switching low drive current no secondary breakdown suitable for switching regulator and dc-dc converter outline 1 2 3 1 2 3 4 4 dpak-1 1. gate 2. drain 3. source 4. drain d g s
2sk1151(l)(s), 2sk1152(l)(s) 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage 2sk1151 v dss 450 v 2sk1152 500 gate to source voltage v gss ?0 v drain current i d 1.5 a drain peak current i d(pulse) * 1 6a body to drain diode reverse drain current i dr 1.5 a channel dissipation pch* 2 20 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? notes: 1. pw 10 ?, duty cycle 1% 2. value at t c = 25?
2sk1151(l)(s), 2sk1152(l)(s) 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source 2sk1151 v (br)dss 450 v i d = 10 ma, v gs = 0 breakdown voltage 2sk1152 500 gate to source breakdown voltage v (br)gss ?0 v i g = ?00 ?, v ds = 0 gate to source leak current i gss ?0 ? v gs = ?5 v, v ds = 0 zero gate voltage 2sk1151 i dss 100 ? v ds = 360 v, v gs = 0 drain current 2sk1152 v ds = 400 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 3.0 v i d = 1 ma, v ds = 10 v static drain to source 2sk1151 r ds(on) 3.5 5.5 i d = 1 a, v gs = 10 v * 1 on stateresistance 2sk1152 4.0 6.0 forward transfer admittance |yfs| 0.6 1.1 s i d = 1 a, v ds = 20 v * 1 input capacitance ciss 160 pf v ds = 10 v, v gs = 0, output capacitance coss 45 pf f = 1 mhz reverse transfer capacitance crss 5 pf turn-on delay time t d(on) ? ?si d = 1 a, v gs = 10 v, rise time t r 10 ns r l = 30 turn-off delay time t d(off) ?0ns fall time t f ?0ns body to drain diode forward voltage v df 1.0 v i f = 1.5 a, v gs = 0 body to drain diode reverse recovery time t rr 220 ns i f = 1.5 a, v gs = 0, di f /dt = 100 a/? note: 1. pulse test
2sk1151(l)(s), 2sk1152(l)(s) 4 power vs. temperature derating 30 20 10 0 channel dissipation pch (w) 50 100 150 case temperature t c (?) maximum safe operation area 10 1 10 1,000 drain to source voltage v ds (v) 3 0.1 0.03 1 ms 100 ta = 25? dc operation (t c = 25?) pw = 10ms (1 shot) 2sk1151 2sk1152 drain current i d (a) 0.01 100 m s 0.3 1.0 10 m s operation in this area is limited by r ds (on) typical output characteristics 2.0 1.6 1.2 0.8 0 4 8 12 16 20 pulse test 0.4 drain current i d (a) v gs = 3.5 v 6 v drain to source voltage v ds (v) 4 v 4.5 v 10 v 5 v 15 v typical transfer characteristics 1.6 1.2 0.8 0.4 0 2 46810 gate to source voltage v gs (v) 2.0 drain current i d (a) v ds = 20 v pulse test ?5? t c = 25? 75?
2sk1151(l)(s), 2sk1152(l)(s) 5 20 16 12 8 4 0 4 8 12 16 20 gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage 1 a i d = 0.5 a drain to source saturation voltage v ds (on) (v) pulse test 2 a 100 50 20 10 1 0.1 0.2 0.5 1.0 5 drain current i d (a) 0.05 static drain to source on state resistance vs. drain current pulse test 15 v v gs = 10 v 2 5 2 static drain to source on state resistance r ds (on) ( w ) 10 8 6 4 2 0 0 40 80 120 160 case temperature t c (?) ?0 static drain to source on state resistance vs. temperature v gs = 10 v pulse test static drain-source on state resistance r ds (on) ( w ) i d = 2 a 0.5 a 1 a forward transfer admittance vs. drain current 5 2 1.0 0.5 0.05 0.1 0.2 1.0 2 5 drain current i d (a) 0.1 0.2 0.5 v ds = 20 v pulse test 75? ?5? forward transfer admittance ? yfs ? (s) t c = 25?
2sk1151(l)(s), 2sk1152(l)(s) 6 body to drain diode reverse recovery time di/dt = 100a/ m s, ta = 25? v gs = 0 pulse test reverse drain current i dr (a) reverse recovery time t rr (ns) 1,000 500 100 50 20 10 200 0.05 0.1 0.2 0.5 1.0 2 5 typical capacitance vs. drain to source voltage 1,000 100 10 1 0 1020304050 drain to source voltage v ds (v) capacitance c (pf) coss ciss crss v gs = 0 f = 1 mhz dynamic input characteristics 500 400 300 200 100 0 24 6810 gate charge qg (nc) drain to source voltage v ds (v) 20 16 12 8 4 0 gate to source voltage v gs (v) 400 v 100 v v ds i d = 1.5 a v gs 250 v v dd = 400 v 250 v 100 v switching characteristics 100 20 10 5 2 1 50 switching time t (ns) 0.05 0.1 0.2 0.5 1.0 2 5 drain current i d (a) t f v gs = 10 v v dd = 30 v pw = 2 m s, duty < 1% t d (on) t r t d (off)
2sk1151(l)(s), 2sk1152(l)(s) 7 reverse drain current vs. source to drain voltage 2.0 1.6 1.2 0.8 0.4 0 0.4 0.8 1.2 1.6 2.0 source to drain voltage v sd (v) reverse drain current i dr (a) pulse test 5 v,10 v v gs =0, ?0v 3 1.0 0.1 0.03 0.01 0.3 10 m 100 m 1 m 10 m 100 m 1 10 pulse width pw (s) q ch?(t) = g s (t) ? q ch? q ch? = 6.25?/w, t c = 25? p dm pw t d = t pw normalized transient thermal impedance vs. pulse width normalized transient thermal impedance g s (t) t c = 25? 0.05 0.02 0.2 0.1 0.5 d = 1 1 shot pulse 0.01 vin monitor vout monitor r l 50 w vin = 10 v d.u.t . v dd = 30 v . switching time test circuit vin 10 % 90 % 90 % 90 % 10 % t d (on) t d (off) t r t f vout 10 % wavewforms
2sk1151(l)(s), 2sk1152(l)(s) 8 package dimensions hitachi code jedec eiaj mass (reference value) dpak (l)-(1) conforms 0.42 g 6.5 0.5 2.3 0.2 0.55 0.1 1.2 0.3 0.55 0.1 5.5 0.5 1.7 0.5 16.2 0.5 3.1 0.5 5.4 0.5 1.15 0.1 2.29 0.5 2.29 0.5 0.8 0.1 as of january, 2001 unit: mm
2sk1151(l)(s), 2sk1152(l)(s) 9 hitachi code jedec eiaj mass (reference value) dpak (s)-(1),(2) conforms 0.28 g as of january, 2001 unit: mm 6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 0 ?0.25 0.55 0.1 1.7 0.5 5.5 0.5 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 2.29 0.5 1.2 max (4.9) (5.3)
2sk1151(l)(s), 2sk1152(l)(s) 10 hitachi code jedec eiaj mass (reference value) dpak (s)-(3) conforms 0.28 g as of january, 2001 unit: mm 6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 0 ?0.25 0.55 0.1 1.5 0.5 5.5 0.5 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 2.29 0.5 1.2 max (5.1) (5.1) (0.1) (0.1)
2sk1151(l)(s), 2sk1152(l)(s) 11 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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